J/SST201/2/4
High Gain, Single N-Channel JFET Amplifier
General Purpose, Low Noise, Low Cost, Single JFET
SOT-23
TOP VIEW
Absolute Maximum Ratings
@ 25 °C (unless otherwise stated)
D
1
S
2
3
Maximum Temperatures
1
Storage Temperature
-65 to +150°C
Junction Operating Temperature
-55 to +150°C
D
S
3
G
TO-92 (3L)
Top View
Maximum Power Dissipation
Continuous Power Dissipation @ +25°C
2
G
SOT-23 (3L)
Top View
350mW
Maximum Currents
IG(F) = 10mA
Gate Forward Current
Maximum Voltages
Gate to Source
VGSS = 40V
Gate to Drain
VGDS = 40V
Features
Benefits
Applications
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• High-Gain, Low Noise Amplifiers
• Low-Current, Low-Voltage
Battery-Powered Amplifiers
• Infrared Detector Amplifiers
• Ultra-High Input Impedance PreAmplifiers
Low Cutoff Voltage: J201
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